High efficiency long wavelength VCSEL on InP grown by MOCVD |
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| Authors: | Nishiyama N Caneau C Guryanov G Liu XS Hu M Zah CE |
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| Affiliation: | Corning Inc., NY, USA; |
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| Abstract: | High efficiency continuous-wave operation of 1.53 /spl mu/m vertical cavity surface emitting lasers (VCSELs) with buried tunnel junction grown by metal organic chemical vapour deposition (MOCVD) has been demonstrated. Devices show a high differential quantum efficiency of 46% and a singlemode power of 1 mW. Minimum threshold current and voltage are 0.45 mA and 1.3 V at room temperature, respectively for devices of 5 /spl mu/m diameter. |
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