| 铌酸锂的反应离子刻蚀 |
| |
| 引用本文： | 应再生 黄涛. 铌酸锂的反应离子刻蚀[J]. 微细加工技术, 1992, 0(1): 35-38 |
| |
| 作者姓名： | 应再生 黄涛 |
| |
| 作者单位： | 上海交通大学应用物理系 200030(应再生)，上海交通大学应用物理系 200030(黄涛) |
| |
| 摘 要： | 本文介绍了铌酸锂晶体在四氟化碳气氛中的反应离子刻蚀。对刻蚀参数的选择原则从机理上加以探讨,并对掩膜的选择进行了试验,最后得到线宽为3.5mm的铌酸锂光栅和槽深为1.1mm的铌酸锂沟道的刻蚀样品。
|
| 关 键 词： | 集成光学 铌酸锂 反应离子刻蚀 |
REACTIVE ION ETCHING (RIE) OF LiNbO_3 |
| |
| Ying Zaisheng Huang Tao. REACTIVE ION ETCHING (RIE) OF LiNbO_3[J]. Microfabrication Technology, 1992, 0(1): 35-38 |
| |
| Authors: | Ying Zaisheng Huang Tao |
| |
| Affiliation: | Shanghai Jiao Tong University |
| |
| Abstract: | The reactive ion etching of LiNbO3 in CF4 plasma is reported. The priciples for choosing the etching parameters are studied from the mechanism and the choosed different masks are tested. As a result, the etching samples of LiNbO3 gratings with 3.5 nm line width and LiNbO3 grooves with 1.1 um depth have been obtained. |
| |
| Keywords: | Integrated optics LiNbO3 Reactive ion etching |
| 本文献已被 CNKI 维普 等数据库收录！ |
