半导体压力传感器研制现状与开发动向 |
| |
引用本文: | 宋晓辉,任道远. 半导体压力传感器研制现状与开发动向[J]. 传感器世界, 2007, 13(7): 10-13 |
| |
作者姓名: | 宋晓辉 任道远 |
| |
作者单位: | 安徽立达信息技术研究所;安徽立达信息技术研究所 |
| |
摘 要: | 随着IC制造技术的迅速发展,硅膜片式压力传感器及其集成化压力传感器受到青睐,对其开发研制相当盛行.本文以应用压阻效应原理的硅膜片式压力传感器为中心阐述半导体压力传感器的最近研制现状与开发动向.
|
关 键 词: | IC(集成电路) 集成化 压阻效应 非易失 RAM(随机存取存储器) |
文章编号: | 1006-883X(2007)07-0010-04 |
Research Status And Development Trend Of Semiconductor Pressure Sensor |
| |
Abstract: | With the development of IC manufacturing technique, the Si-film pressure sensor and the integrated pressure sensor get more and more attentions . The research about them are popular . The lastest research status and development trend of semiconductor pressure sensor are presented in this paper with the focus on the Si-film pressure with piezoresistance effect theory |
| |
Keywords: | |
本文献已被 CNKI 维普 万方数据 等数据库收录! |