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电子束蒸发法制备CdS多晶薄膜及其结构和光学性质
引用本文:杨定宇,朱兴华,魏昭荣,杨维清,李乐中,杨军,高秀英. 电子束蒸发法制备CdS多晶薄膜及其结构和光学性质[J]. 半导体学报, 2011, 32(2): 023001-4
作者姓名:杨定宇  朱兴华  魏昭荣  杨维清  李乐中  杨军  高秀英
作者单位:成都信息工程学院
摘    要:采用电子束蒸发法在玻璃衬底上制备了具有较高结晶度和优异透光性能的CdS多晶薄膜,对制备样品的结构和光学性质进行了表征。结果表明,制备薄膜属于六方相多晶结构,沿(002)晶向择优取向生长。此外,随着衬底温度的升高,样品结晶质量先提高后降低,与薄膜厚度变化有关。紫外-可见透过谱显示,随着衬底温度的升高,薄膜的光吸收边趋于陡直,但光学带隙呈现波动变化,分布在2.389-2.448 eV之间。对样品进行光致发光谱测试表明,CdS薄膜发光锋展宽严重,仅在1.60 eV附近有一个微弱的红光发射。论文对上述实验结果进行了分析和讨论。

关 键 词:CdS多晶薄膜;衬底温度;紫外-可见透过谱;光致发光谱
收稿时间:2010-07-08

Structural and optical properties of polycrystalline CdS thin films depositedby electron beam evaporation
Yang Dingyu,Zhu Xinghu,Wei Zhaorong,Yang Weiqing,Li Lezhong,Yang Jun and Gao Xiuying. Structural and optical properties of polycrystalline CdS thin films depositedby electron beam evaporation[J]. Chinese Journal of Semiconductors, 2011, 32(2): 023001-4
Authors:Yang Dingyu  Zhu Xinghu  Wei Zhaorong  Yang Weiqing  Li Lezhong  Yang Jun  Gao Xiuying
Affiliation:School of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China;School of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China;School of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China;School of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China;School of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China;School of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China;School of Optoelectronic Technology, Chengdu University of Information Technology, Chengdu 610225, China
Abstract:Highly crystalline and transparent cadmium sulphide (CdS) films were deposited on glass substrate by electron beam evaporation technique. The structural and optical properties of the films were investigated. The X-ray diffraction analysis revealed that the CdS films have a hexagonal structure and exhibit preferred orientation along the (002) plane. Meanwhile, the crystalline quality of samples increased first and then decreased as the substrate temperature improved, which is attributed to the variation in film thickness. UV-vis spectra of CdS films indicate that the absorption edge becomes steeper and the band gap present fluctuation changes in the range of 2.389--2.448 eV as the substrate temperature increased. The photoluminescence peak of the CdS films was found to be broadened seriously and there only emerges a red emission band at 1.60 eV. The above results were analyzed and discussed.
Keywords:polycrystalline CdS thin film  substrate temperature  UV-vis spectrum  photoluminescence spectrum
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