| 用正向栅控二极管的方法对场效应晶体管的参数提取 |
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| 引用本文： | 张辰飞,马晨月,郭昕婕,张秀芳,何进,王国增,杨张,刘志伟. 用正向栅控二极管的方法对场效应晶体管的参数提取[J]. 半导体学报, 2011, 32(2): 024001-5 |
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| 作者姓名： | 张辰飞 马晨月 郭昕婕 张秀芳 何进 王国增 杨张 刘志伟 |
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| 作者单位： | 北京大学微电子学研究院 |
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| 基金项目： | Project supported by the Key Project of the National Natural Science Foundation of China （No. 60936005）, the Shenzhen Science ＆ Technology Foundation, China （No. JSA200903160146A）, the Industry, Education and Academy Cooperation Program of Guangdong Province, China （No. 2009B090300318）, and the Fundamental Research Project of Shenzhen Science ＆ Technology Foundation, China （No. JC200903160353A）. |
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| 摘 要： | 本文用正向栅控二极管的方法来提取场效应晶体管的栅氧层厚度和体掺杂浓度，尤其是在这两个变量事先都未知的情况下进行提取。首先，用器件物理推导出了以栅氧层厚度、体掺杂浓度为参数的正向栅控二极管峰值电流。然后用ISE-Dessis模拟了不同栅氧层厚度和体衬底掺杂浓度下的产生复合电流峰值的特性，用于参数提取。模拟数据的结果与正向栅控二极管的方法显示出高度的一致性。
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| 关 键 词： | MOSFET 参数提取 二极管 门控 氧化层厚度 掺杂浓度 电流特性 模拟数据 |
| 收稿时间： | 2010-07-28 |
| 修稿时间： | 2010-09-09 |
Forward gated-diode method for parameter extraction of MOSFETs |
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| Zhang Chenfei,Ma Chenyue,Guo Xinjie,Zhang Xiufang,He Jin,Wang Guozeng,Yang Zhang and Liu Zhiwei. Forward gated-diode method for parameter extraction of MOSFETs[J]. Chinese Journal of Semiconductors, 2011, 32(2): 024001-5 |
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| Authors: | Zhang Chenfei Ma Chenyue Guo Xinjie Zhang Xiufang He Jin Wang Guozeng Yang Zhang Liu Zhiwei |
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| Affiliation: | Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Shenzhen 518057, China; TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China;TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China;TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China;TSRC, Institute of Microelectronics, School of Electronic Engineering and Computer Science, Peking University, Beijing 100871, China;Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Shenzhen 518057, China; Key Laboratory of Integrated Microsystems, School of Computer & Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, Chin;Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Shenzhen 518057, China;Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Shenzhen 518057, China;Peking University Shenzhen SOC Key Laboratory, PKU HKUST Shenzhen Institute, Shenzhen 518057, China |
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| Abstract: | The forward gated-diode method is used to extract the dielectric oxide thickness and body doping concentration of MOSFETs, especially when both of the variables are unknown previously. First, the dielectric oxide thickness and the body doping concentration as a function of forward gated-diode peak recombination--generation (R--G) current are derived from the device physics. Then the peak R--G current characteristics of the MOSFETs with different dielectric oxide thicknesses and body doping concentrations are simulated with ISE-Dessis for parameter extraction. The results from the simulation data demonstrate excellent agreement with those extracted from the forward gated-diode method. |
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| Keywords: | forward gated-diode method recombination--generation current parameter extraction MOSFETs |
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