基于选择性湿法粗化方法制作n型欧姆接触的垂直结构发光二极管的电学性能研究

低阻和高稳定性的氮极性面N型欧姆接触对于GaN基垂直结构发光二极管尤为重要。研究发现，相对于未湿法粗化N型GaN面，湿法粗化N型GaN面的欧姆接触电阻较大，且最终制成的发光二极管具有较高的开启电压和较低的反向漏电。本文提出了一种选择性湿法粗化方法制作氮极性面N型GaN欧姆接触，基于此方法最终制成的垂直结构发光二极管具有更低的开启电压和反向漏电，并且输出光功率略有提升。进一步的老化实验表明该法制作的欧姆接触具有良好的稳定性。

Electrical characteristics of a vertical light emitting diode with n-type contacts on a selectively wet-etching roughened surface

Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.