| 基于硅纳米线波导的16通道200GHz阵列波导光栅 |
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| 引用本文： | 赵雷,安俊明,张家顺,宋世娇,吴远大,胡雄伟.基于硅纳米线波导的16通道200GHz阵列波导光栅[J].半导体学报,2011,32(2):024010-4. |
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| 作者姓名： | 赵雷 安俊明 张家顺 宋世娇 吴远大 胡雄伟 |
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| 作者单位： | 中国科学院半导体研究所,中国科学院半导体研究所 |
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| 基金项目： | Project supported by the National High Technology Research and Development Program of China （No. 2006AA03Z420） and the National Natural Science Foundation of China （Nos. 60776057, 60837001, 60776057）. |
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| 摘 要： | 设计了基于硅纳米线波导的16通道，通道间隔为200GHz的阵列波导光栅(AWG)。传输函数法模拟了器件传输谱，结果表明器件的通道间隔为1.6nm，通道间串扰为31dB。器件利用SOI材料，由193nm深紫外光刻工艺制备。光谱测试结果分析表明，通道串扰为5-8dB，中心通道损耗2.2dB，自由光谱区长度24.7nm，平均信道间隔1.475nm。详细分析了器件谱线畸变的原因。
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| 关 键 词： | 阵列波导光栅 硅纳米线 16通道 GHz 解复用器 传递函数法 信道间隔 光谱响应 |
| 收稿时间： | 7/7/2010 3:45:31 PM |
| 修稿时间： | 9/8/2010 8:14:09 PM |
16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides |
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| Zhao Lei,An Junming,Zhang Jiashun,Song Shijiao,Wu Yuanda and Hu Xiongwei.16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides[J].Chinese Journal of Semiconductors,2011,32(2):024010-4. |
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| Authors: | Zhao Lei An Junming Zhang Jiashun Song Shijiao Wu Yuanda and Hu Xiongwei |
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| Affiliation: | State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed. The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB. The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate. The demultiplexing characteristics are observed with crosstalk of 5--8 dB, central channel's insertion loss of 2.2 dB, free spectral range of 24.7 nm and average channel spacing of 1.475 nm. The cause of the spectral distortion is analyzed specifically. |
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| Keywords: | integrated optics arrayed waveguide grating Si nanowire waveguides |
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