Grafted GaAlAs rib waveguides on an InP substrate |
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| Authors: | Yi-Yan A Seto M Gmitter TJ Hwang DM Florez LT |
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| Affiliation: | Bellcore, Red Bank, NJ, USA; |
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| Abstract: | Rib waveguides were fabricated on a 1.4 mu m thick GaAlAs epilayer granted on the surface of a semi-insulating InP substrate by epitaxial lift-off. Single-mode waveguides with propagation losses (<7 dB/cm) lower than heteroepitaxially grown counterparts have been achieved. TEM analysis on the GaAlAs/InP interface indicates surface scattering as one of the main loss mechanisms.<> |
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