| 红色AlGaInP激光器的特性及热特性分析 |
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| 引用本文： | 郭伟玲,廉鹏,丁颖,李建军,崔碧峰,刘莹,邹德恕,沈光地.红色AlGaInP激光器的特性及热特性分析[J].北京工业大学学报,2002,28(4):423-425. |
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| 作者姓名： | 郭伟玲 廉鹏 丁颖 李建军 崔碧峰 刘莹 邹德恕 沈光地 |
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| 作者单位： | 北京工业大学,电子信息与控制工程学院,北京,100022 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);20000683-02; |
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| 摘 要： | 设计和制备了λ＝680nm的红色AlGaInP/GaInP应变量子阱激光器. 制得的未镀膜20μm脊型条形红色激光器的输出功率达到100mW,斜率效率0.56W/A,垂直和平行远场发散角分别为31°和9°. 未镀膜4m深腐蚀器件的功率可达10mW, 斜率效率为0.4W/A,峰值波长为681nm,峰值半宽为0.5nm. 不同腔长器件的特性显示器件的内损耗为4.27/cm,内量子效率达45%. 对不同腔长的器件进行了变温测试,得到器件的特征温度为120～190K.
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| 关 键 词： | AlGaInP 激光器 热特性 |
| 文章编号： | 0254-0037(2002)04-0423-03 |
| 修稿时间： | 2002年4月10日 |
Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis |
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| GUO Wei-ling,LAN Peng,DING Ying,LI Jian-jun,CUI Bi-feng,LIU Ying,ZOU De-shu,SHEN Guang-di.Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis[J].Journal of Beijing Polytechnic University,2002,28(4):423-425. |
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| Authors: | GUO Wei-ling LAN Peng DING Ying LI Jian-jun CUI Bi-feng LIU Ying ZOU De-shu SHEN Guang-di |
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| Affiliation: | GUO Wei-ling,L1AN Peng,DING Ying,LI Jian-jun,CUI Bi-feng,LIU Ying,ZOU De-shu,SHEN Guang-di |
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| Abstract: | AlGalnP/ GalnP strained Quantum well laser device emitting at about 680 nm wavelength has been fabricated and analyzed. Slope efficiency of 0.56 W/A and strip red output power as high as 100 mW, vertical and parallel far field divergence angle of 31° and 9° respectively are obtained for 20 μm ridge laser device without coating. For a 4 μm uncoated deep eroded laser device, the slope efficiency is 0.4 W/A, the output power about 10 mW, the peak wavelength 681 nm and the width 0.5 nm. The characteristic temperature is between 120-190 K for the device of different cavity length. The total internal losses of those devices arc 4.27/ cm, the internal quantum efficiency is 45%. |
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| Keywords: | AlGaInP laser device thermal property |
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