The electrical properties of polycrystalline ZnIn2Te4 thin films

Thin films of ZnIn₂Te₄ are grown onto glass substrates by the flash evaporation technique. Electrical properties such as electrical resistivity and activation energy were studied with different substrate temperatures ranging from 300 to 623 K. It is observed that the film grown at a substrate temperature of 523 K is a single phase polycrystalline stoichiometric film with minimum electrical resistivity. The effect of the film thickness on the electrical properties of ZnIn₂Te₄ thin films grown at a substrate temperature of 523 K has been studied. The experimental data can be satisfactorily explained on the basis of the Fuchs-Sondheimer theory.