A novel technology to reduce the antenna charging effects duringpolysilicon gate electron-cyclotron-resonance etching |
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| Authors: | Huang-Chung Cheng Tzong-Kuei Kang Tzun-Kun Ku Bau-Tong Dai Liang-Po Chen |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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| Abstract: | A novel technique, which uses Cl2/O2 mixed gas in the electron cyclotron resonance (ECR) etching system, has been proposed to remove the antenna charging effect of the MOS capacitors with 5-nm-thick oxides during polysilicon gate etching. The Cl2 /O2 can cause the trenching effect and prevents the gate oxide from the charging damage. Furthermore, the ECR system can provide high polysilicon/oxide selectivity so that the Si substrate under gate oxide is not directly bombarded by the ions. Consequently, the Ebd degradation of the MOS capacitors disappears as the trenching effect is apparent by using moderate Cl2/O2 mixed gas |
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