OMCVD-grown In0.4Al0.6As/InP quantum-wellHEMT |
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| Authors: | Hong W.-P. Bhat R. DeRosa F. Hayes J.R. Chang G.-K. |
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| Affiliation: | Bellcore, Red Bank, NJ; |
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| Abstract: | The transport properties and device characteristics of pseudomorphic In0.4Al0.6As/InP modulation-doped heterostructures are investigated. The existence of a two-dimensional electron gas at the heterojunction was confirmed by Shubnikov-de Haas measurements. A high electron mobility transistor (HEMT) having a gate length of 1.5 μm showed extrinsic transconductances and drain current densities as high as 160 mS/mm and 300 mA/mm, respectively. The HEMT also showed a very small output conductance of less than 2 mS/mm and high gate-drain breakdown voltage of larger than 15 V. These results show the great potential of this HEMT for high-voltage gain and high-power microwave applications |
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