| 太阳电池铸造多晶硅材料的结构缺陷及其控制 |
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| 引用本文： | 李云明,罗玉峰,张发云,胡云,王发辉.太阳电池铸造多晶硅材料的结构缺陷及其控制[J].材料导报,2015,29(13):29-33. |
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| 作者姓名： | 李云明 罗玉峰 张发云 胡云 王发辉 |
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| 作者单位： | 1. 新余学院新能源科学与工程学院，新余 338004; 新余学院江西省高等学校硅材料重点实验室，新余 338004; 中国科学院大学深圳先进技术研究院，深圳 518055;2. 新余学院新能源科学与工程学院，新余 338004; 新余学院江西省高等学校硅材料重点实验室，新余 338004 |
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| 基金项目： | 国家自然科学基金(51164033)；江西省高等学校科技落地计划项目(KJLD12050)；江西省教育厅科学技术研究项目(12745;12746;12747;12748) |
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| 摘 要： | 铸造多晶硅具有高的性价比,已成为主要的光伏材料,其晶体内的结构缺陷显著影响太阳电池的转换效率。综述了传统铸造多晶硅太阳电池材料和新型黑硅太阳电池材料的研究进展,同时阐述了控制多晶硅中的杂质、晶界、位错的途径及方法。
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| 关 键 词： | 多晶硅 黑硅 结构缺陷 杂质 晶界 位错 |
Restraining the Structure Defects in Cast Multicrystalline Silicon Materials Used for Solar Cells |
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| LI Yunming,LUO Yufeng,ZHANG Fayun,HU Yun and WANG Fahui.Restraining the Structure Defects in Cast Multicrystalline Silicon Materials Used for Solar Cells[J].Materials Review,2015,29(13):29-33. |
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| Authors: | LI Yunming LUO Yufeng ZHANG Fayun HU Yun and WANG Fahui |
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| Affiliation: | School of New Energy Science and Engineering,Xinyu University,Xinyu 338004;Key Laboratory of Jiangxi University for Silicon Materials,Xingyu University,Xinyu 338004;Shenzhen Institutes of Advanced Technology,University of Chinese Academy of Sciences, Shenzhen 518055,School of New Energy Science and Engineering,Xinyu University,Xinyu 338004;Key Laboratory of Jiangxi University for Silicon Materials,Xingyu University,Xinyu 338004,School of New Energy Science and Engineering,Xinyu University,Xinyu 338004;Key Laboratory of Jiangxi University for Silicon Materials,Xingyu University,Xinyu 338004,School of New Energy Science and Engineering,Xinyu University,Xinyu 338004;Key Laboratory of Jiangxi University for Silicon Materials,Xingyu University,Xinyu 338004 and School of New Energy Science and Engineering,Xinyu University,Xinyu 338004;Key Laboratory of Jiangxi University for Silicon Materials,Xingyu University,Xinyu 338004 |
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| Abstract: | Cast multicrystalline silicon has become the dominant material for solar cells for its high perfor-mance-price ratio.Properties of the solar cells strongly depend on structure defects of the multicrystalline silicon.The status quo of traditional multicrystalline silicon materials and black silicon materials used for solar cells is described.In addition, various routes to restrain the impurities,grain boundaries and dislocations in polysilicon are analyzed. |
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| Keywords: | multicrystalline silicon black silicon structure defect impurity grain boundary dislocation |
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