汽相外延ZnSe单晶的激光发射(英文)

Laser Emission from VPE ZnSe Epilayers

Much work has been done on the laser emission from ZnSe under electron beam pumping. In this paper, the stimulated emission from ZnSe epilayer has been investigated under a nitrogen laser excitation. The ZnSe epilayers were grown by vapor phase epitaxy on (100) GaAs substrates. Optically pumped lasers were fabricated from the ZnSe epilayers by cleaving the ZnSe/GaAs along the (100) cleavage planes into rectangles with widths 100-600μm, and found to operate in the blue portion of the visible spectrum at 77K. The threshold of laser emission was determined to be about 1MW/cm2 from the dependence of the total light output on excitation intensity. The exciton-exciton inelastic collision process is the dominant laser emission mechanism in the ZnSe laser at 77K.