| 理论分析辉光放电对碳纳米管生长速率的影响 |
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| 引用本文： | 崔玉亭,王必本,王万录,廖克俊,张兵,郑坤.理论分析辉光放电对碳纳米管生长速率的影响[J].真空科学与技术学报,2003,23(6):404-407. |
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| 作者姓名： | 崔玉亭 王必本 王万录 廖克俊 张兵 郑坤 |
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| 作者单位： | 1. 重庆大学数理学院,重庆,400044
2. 北京工业大学应用数理学院,北京,100022 |
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| 摘 要： | 利用负偏压增强热丝化学气相沉积 ,在沉积过渡层Ta和催化剂NiFe层的Si衬底上制备了碳纳米管 ,并用扫描电子显微镜研究了它们的形貌。发现辉光放电后 ,碳纳米管的平均长度比无辉光放电时大 ,并且随着负偏压的增大而增大 ,即辉光放电增大了它们的生长速率。结合辉光放电和扩散理论分析了辉光放电对碳纳米管生长速率的影响 ,结果表明在生长碳纳米管的过程中 ,由于辉光放电的产生 ,碳在催化剂中的活度得到增强 ,从而增大了碳纳米管的生长速率。
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| 关 键 词： | 碳纳米管 辉光放电 离子轰击 生长速率 |
| 文章编号： | 0253-9748(2003)06-0404-04 |
| 修稿时间： | 2003年6月9日 |
Theoretical Study of Carbon Nanotube Growth by Glow Discharge |
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| Cui Yuting ,Wang Biben ,Wang Wanlu ,Liao Kejun ,Zhang Bing and Zheng Kun.Theoretical Study of Carbon Nanotube Growth by Glow Discharge[J].JOurnal of Vacuum Science and Technology,2003,23(6):404-407. |
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| Authors: | Cui Yuting Wang Biben Wang Wanlu Liao Kejun Zhang Bing and Zheng Kun |
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| Affiliation: | Cui Yuting 1,Wang Biben 2,Wang Wanlu 1*,Liao Kejun 1,Zhang Bing 2 and Zheng Kun 2 |
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| Abstract: | Carbon nanotube (CNT) film was grown on Ta coated silicon substrates with NiFe as the catalyst by negative bias enhanced,hot filament chemical vapor deposition.The CNT structures were studied with scanning electron microscopy (SEM).We found that the average CNT length is much longer after glow discharge and its length increases with lowering of the negative bias voltage,that is,glow discharge speeds up its growth rate.Influence of glow discharge on CNT growth was tentatively analyzed.And the preliminary results show that glow discharge may significantly promote the activation of carbon ions inside the catalyst layers and favorably increase CNT growth rate. |
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| Keywords: | Carbon nanotubes Glow discharge Ion bombardment Growth rate |
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