首页 | 本学科首页   官方微博 | 高级检索  
     

VLSI片上互连线电感提取技术及考虑电感效应的互连分析
引用本文:何剑春,严晓浪,何乐年,葛海通.VLSI片上互连线电感提取技术及考虑电感效应的互连分析[J].电路与系统学报,2002,7(4):67-71.
作者姓名:何剑春  严晓浪  何乐年  葛海通
作者单位:浙江大学,电气工程学院VLSI设计研究所,浙江,杭州,310027
基金项目:浙江省自然科学基金资助重点项目(ZD0015)
摘    要:VDSM工艺下,芯片的高速、高集成度趋使电磁耦合作用不容忽略;而电感效应的引入使VLSI设计和验证变得复杂,本文阐述了VLSI片上互连线电感提取技术现状及发展方向,对各类提取方法作了扼要比较;同时探讨了互连分析中包含电感效应时存在的部分问题和解决办法,以期作为提高VLSI设计、分析和验证效率的有效向导。

关 键 词:电感效应  参数提取  频变寄生电感  VLSI互连线  IC  芯片
文章编号:1007-0249(2002)04-0067-05
修稿时间:2001年8月27日

Parasitic Inductance Modeling for On-chip Interconnects Based on IC Analysis on Inductive Effects
HE Jian-chun,YAN Xiao-lang,HE Le-nian,GE Hai-tong.Parasitic Inductance Modeling for On-chip Interconnects Based on IC Analysis on Inductive Effects[J].Journal of Circuits and Systems,2002,7(4):67-71.
Authors:HE Jian-chun  YAN Xiao-lang  HE Le-nian  GE Hai-tong
Abstract:Since VDSM designs tend to be much faster and denser, inductive effects is of VLSI interconnects are becoming more and more important. While parasitic inductance is taken into account, most IC design and verification methodologies are significantly complicated. In this tutorial paper we reviewed recent developments in inductance extraction for on-chip interconnects, and discussed some resulting analysis and verification problems. A subset of recent results for partially addressing the challenge was presented. We hope that the paper will be a good guidance for VLSI design, analysis and verification.
Keywords:parameter extraction  frequency-dependent parasitic inductance  VLSI interconnect  
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号