| MOS电容的衬底热电子注入响应特性 |
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| 引用本文： | 余学峰,艾尔肯,张国强,任迪远,陆妩,郭旗,严荣良. MOS电容的衬底热电子注入响应特性[J]. 核技术, 2000, 23(12): 869-872 |
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| 作者姓名： | 余学峰 艾尔肯 张国强 任迪远 陆妩 郭旗 严荣良 |
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| 作者单位： | 中国科学院新疆物理研究所乌鲁木齐830011 |
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| 摘 要： | 为研究抗热载子损伤的加固技术，对国产Ｎ型ＭＯＳ电容进行了Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ衬底的热电子高场注入（ＳＨＥ），并利用高频Ｃ－Ｖ及准静态Ｃ－Ｖ分析技术，从微观氧化物电荷、界面态的感生变化及其界面态的能量分布变化等角度研究了ＭＯＳ结构热载子损伤的特性和机理。
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| 关 键 词： | MOS电容 衬底热电子注入 抗热载子损伤 |
| 修稿时间： | 1999-05-12 |
Response of MOS capacitor to substrate hot-carrier ejection |
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| Yu Xuefeng,Erkin ZHANG,Guoqiang,REN Diyuan,LU WuGUO,Qi YAN,Rongliang. Response of MOS capacitor to substrate hot-carrier ejection[J]. Nuclear Techniques, 2000, 23(12): 869-872 |
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| Authors: | Yu Xuefeng Erkin ZHANG Guoqiang REN Diyuan LU WuGUO Qi YAN Rongliang |
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| Abstract: | N-type MOS capacitors have been experimented with Substrate Hot-carrier Ejection (SHE). By means of high frequency and quasi-static C-V techniques, the characteristics and mechanism of MOS structure's damage induced by SHE have been studied from the changes of oxide charges and interface states as well as distribution of the interface state with the energy before and after SHE. The results are helpful to further harden MOS devices from hot carrier ejection damage. |
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| Keywords: | Hot-carrier ejection Damage Interface states Oxide charges |
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