| 非对称轻掺杂漏(LDD)MOSFET |
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| 引用本文： | 陈学良,王自惠. 非对称轻掺杂漏(LDD)MOSFET[J]. 半导体学报, 1990, 11(2): 136-139 |
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| 作者姓名： | 陈学良 王自惠 |
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| 作者单位： | 中国科学院上海冶金研究所(陈学良)，中国科学院上海冶金研究所(王自惠) |
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| 摘 要： | 提出并制作了一种仅有漏端轻掺杂区的MOSFET新结构──非对称LDD MOSFET。它与通常LDD MOSFET相比,抑制热载流子效应的能力相同,源漏串联电阻降低40％左右,线性区和饱和区的跨导分别增加50％和20％左右。用该器件制作的CMOS电路,其速度性能优于通常LDD MOSFET制作的同样电路。
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| 关 键 词： | MOSFET 非对称 掺杂 热载流子 源漏 |
Asymmetry LDD MOSFET |
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| CHEN Xueliang/. Asymmetry LDD MOSFET[J]. Chinese Journal of Semiconductors, 1990, 11(2): 136-139 |
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| Authors: | CHEN Xueliang/ |
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| Affiliation: | CHEN Xueliang/Shanghai Institute of Metallurgy,Academia SinicaWANG Zihui/Shanghai Institute of Metallurgy,Academia Sinica |
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| Abstract: | A new MOSFET structure-Asymmetry LDD MOSFET,which contains only a lightlydoped buffer region near the drain, has been proposed and fabricated.Asymmetry LDD structure can decrease source-drain series resistance and improve transconductance as comparedwith the conventional LDD MOSFET, keeping the same capability of reducing hot-carrier effects.CMOS ICs consisting of the asymmetry LDD devices exhibit a better performance inspeed. |
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| Keywords: | LDD MOSFET Hot-carrier effects Series resistance |
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