Electrical properties of oxygen ion-implanted InP |
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Authors: | L He W A Anderson |
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Affiliation: | (1) Department of Electrical and Computer Engineering, Center for Electronic and Electro-optic Materials, 217 Bonner Hall State University of New York at Buffalo, 14260 Buffalo, NY |
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Abstract: | The effect of oxygen ion implantation on defect levels and the electrical properties of undoped InP (n-type) and Sn-doped InP have been investigated as a function of postimplant annealing at temperatures of 300 and 400° C. The
surface interruption by ion bombardment was studied by a non-invasive optical technique—photoreflectance (PR) spectroscopy.
Current-voltage (I-V) characterization and deep level transient spectros-copy (DLTS) were carried out. The free carrier compensation
mechanism was studied from the microstructure behavior of defect levels associated with O+ implantation. Free carriers may
be trapped in both residual and ion-bombardment-induced defect sites. Rapid thermal annealing (RTA) performed at different
temperatures showed that if residual traps were removed by annealing, the compensation efficiency will be enhanced. Post-implant
RTA treatment showed that at the higher temperature (400°C), trapped carriers may be re-excited, resulting in a weakened compensation.
Comparing the results of undoped and Sn-doped InP indicated that the carrier compensation effect is substrate doping dependent. |
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Keywords: | Oxygen implantation defect levels |
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