Solid Liquid Interdiffusion Bonding of (Pb,Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer |
| |
Authors: | T H Chuang H J Lin C H Chuang W T Yeh J D Hwang H S Chu |
| |
Affiliation: | 1. Institute of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan 2. Material & Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu, 31015, Taiwan
|
| |
Abstract: | A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid–liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|