| 宽温区高温MOS器件优化设计 |
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| 引用本文： | 冯耀兰.宽温区高温MOS器件优化设计[J].固体电子学研究与进展,1997,17(4):360-365. |
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| 作者姓名： | 冯耀兰 |
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| 作者单位： | 东南大学微电子中心!南京，210096 |
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| 摘 要： | 全面介绍了27－300℃定温区高温MOs器件的优化设计考虑及用计算机模拟技术进行优化设计的方法。研究结果表明，选取代化的设计参数可使设计的MOs器件在27－300℃宽温区工作并获得最佳高温性能。
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| 关 键 词： | 宽温区 高温 MOs器件 优化设计 模拟 |
The Optimum Design of High Temperature MOS Devices Operating in Wide Temperature Ranged |
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| Fen Yaohan.The Optimum Design of High Temperature MOS Devices Operating in Wide Temperature Ranged[J].Research & Progress of Solid State Electronics,1997,17(4):360-365. |
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| Authors: | Fen Yaohan |
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| Abstract: | In this psper, the consideration and computer simulating method of optimum desigh of high temperature MOS devices operating in wide temperature range(27－300℃) are presented．The results indicate that optimization of the design parameters can make MOS devices working in wide temperature range and having the best high temperature properties． |
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| Keywords: | Wide Temperature Range High Temperature MOS Device Optimum Desigh Simulation |
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