Solid-state memories based on ferroelectric tunnel junctions |
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Authors: | Chanthbouala André Crassous Arnaud Garcia Vincent Bouzehouane Karim Fusil Stéphane Moya Xavier Allibe Julie Dlubak Bruno Grollier Julie Xavier Stéphane Deranlot Cyrile Moshar Amir Proksch Roger Mathur Neil D Bibes Manuel Barthélémy Agnès |
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Affiliation: | Unité Mixte de Physique CNRS/Thales, 1 Av. A. Fresnel, Campus de l'Ecole Polytechnique, 91767 Palaiseau and Université Paris-Sud, 91405 Orsay, France. |
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Abstract: | Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1?×?10(6)?A?cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ~1?×?10(4)?A?cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism. |
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