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阳极铝箔隧道孔的二次生长规律
引用本文:肖仁贵,闫康平,付俊,严季新,王建中. 阳极铝箔隧道孔的二次生长规律[J]. 电子元件与材料, 2008, 27(5): 56-58
作者姓名:肖仁贵  闫康平  付俊  严季新  王建中
作者单位:四川大学,化工学院,四川,成都,610065;贵州大学,化工学院,贵州,贵阳,5500033;四川大学,化工学院,四川,成都,610065;江苏中联科技集团,江苏,通州,226361
摘    要:将在酸性介质中产生了隧道孔的铝箔置于中性侵蚀液中继续成长。发现中性侵蚀液的组分对铝箔隧道孔形貌的影响规律:当溶液仅含Cl–时,会有新的隧道孔产生,铝箔表面隧道孔分布密度从3.63×107cm–2增加为3.72×107cm–2,隧道孔平均孔径从0.40μm扩展到0.75μm,但隧道孔长度没有明显变化;在含Cl–电解质中添加少量有机添加剂时,铝箔表面没有新的隧道孔产生,由于出现并孔现象,隧道孔分布密度反而从3.63×107cm–2降低至3.43×107cm–2,但隧道孔的孔径从0.40μm扩展到0.80μm,长度从24μm增加到37μm。

关 键 词:电子技术  铝箔  侵蚀  形貌  隧道孔  电容器
文章编号:1001-2028(2008)05-0056-03
修稿时间:2007-12-25

Second growth law of tunnel hole in etched aluminum foil for electrolytic capacitor
XIAO Ren-gui,YAN Kang-ping,FU Jun,YAN Ji-xin,WANG Jian-zhong. Second growth law of tunnel hole in etched aluminum foil for electrolytic capacitor[J]. Electronic Components & Materials, 2008, 27(5): 56-58
Authors:XIAO Ren-gui  YAN Kang-ping  FU Jun  YAN Ji-xin  WANG Jian-zhong
Affiliation:XIAO Ren-gui1,2,YAN Kang-ping1,FU Jun1,YAN Ji-xin3,WANG Jian-zhong3 (1. School of Chemical Engineering,Sichuan University,Chengdu 610065,China,2. School of Chemical Engineering,Guizhou university,Guiyang 550003,3. Jiangsu United Technology Group,Tongzhou 226361,Jiangsu Province,China)
Abstract:Tunnels in Al foils were developed in neutral solution after they had been produced in acidic solution. The effect of the composition in neutral electrolyte solution on tunnel morphology is discovered: when the solution containing Cl ions without any addition is used as electrolyte, the distribution density of tunnels is increased from 3.63×107 cm–2 to 3.72×107 cm–2, the average size of tunnels is enlarged from 0.40 μm to 0.75 μm, but the tunnel length has no obvious change; when some organic compound is dissolved in the neutral electrolyte, the distribution density of tunnels is decreased from 3.63×107 cm–2 to 3.43×107 cm–2, but the tunnel average size is changed from 0.40 μm to 0.80 μm, and the tunnels length is increased from 24 μm to 37 μm.
Keywords:electron technology  aluminum foil  etching  morphology  tunnel hole  capacitor  
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