Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs |
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Authors: | Jeong-Soo Lee Yang-Kyu Choi Daewon Ha Balasubramanian S. Tsu-Jae King Bokor J. |
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Affiliation: | Dept. of Electr. Eng., Univ. of Texas, Richardson, TX, USA; |
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Abstract: | The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin. |
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