Impact of interface and bulk trapped charges on transistor reliability |
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| Authors: | G Ghidini M Langenbuch R Bottini D Brazzelli A Ghetti N Galbiati G Giusto A Garavaglia |
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| Affiliation: | SGS-Thomson Microelectronics, Central R&D, Via C. Olivetti 2, 20041 Agrate Brianza, Italy |
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| Abstract: | Oxide reliability is a key issue and the main topic of several recent works. We study the impact of gate oxide stress on transistor performances following a methodology similar to oxide lifetime characterisation in capacitors. A universal trend for degradation of the threshold voltage and drain saturation current with injected charge is observed and the impact of boron on trapping enhancement has been separated by comparing n-MOS and p-MOS. |
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