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Diamond growth by carbon ion implantation of diamond |
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| Authors: | S -T Lee W M Lau L J Huang Z Ren F Qin |
| Affiliation: | a Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong b Department of Materials Engineering, University of Western Ontario, London, Ontario N6A 5B9, Canada c Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China |
| Abstract: | Medium energy (5–25 keV) 13C+ ion implantation into diamond (100) to a fluence ranging from 1016 cm?2 to 1018 cm?2 was performed for the study of diamond growth via the approach of ion beam implantation. The samples were characterized with Rutherford backscattering/channelling spectroscopy, Raman spectroscopy, X-ray photoemission spectroscopy and Auger electron spectroscopy. Extended defects are formed in the cascade collision volume during bombardment at high temperatures. Carbon incorporation indeed induces a volume growth but the diamond (100) samples receiving a fluence of 4 × 1017 to 2 × 1018 at. cm?2 (with a dose rate of 5 × 1015 at. cm?2 s?1 at 5 to 25 keV and 800 °C) showed no He-ion channelling. Common to these samples is that the top surface layer of a few nanometers has a substantial amount of graphite which can be removed by chemical etching. The rest of the grown layer is polycrystalline diamond with a very high density of extended defects. |
| Keywords: | Diamond subsurface growth Carbon implantation Diamond defect structure Diamond characterization |
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