| 射频磁控溅射生长C轴择优取向AIN压电薄膜 |
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| 引用本文： | 杨保和,徐娜,陈希明,薛玉明,李化鹏.射频磁控溅射生长C轴择优取向AIN压电薄膜[J].光电子．激光,2007,18(12):1430-1434. |
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| 作者姓名： | 杨保和 徐娜 陈希明 薛玉明 李化鹏 |
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| 作者单位： | 天津理工大学,天津市薄膜电子与通信器件重点实验室,天津,300191 |
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| 基金项目： | 国家自然科学基金
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天津市自然科学基金
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天津市教委资助项目 |
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| 摘 要： | 采用射频磁控反应溅射工艺，在Si（400）衬底上制备了高c轴取向的AlN薄膜。用X射线衍射仪（XRD）分析了薄膜特征。研究了不同的Ar／N2比、衬底偏压、工作压强对AlN薄膜c轴择优取向的影响。研究了AlN薄膜在以氮终止的硅衬底和纯净硅衬底两种表面状态的生长机制，发现在以氮终止的硅衬底表面生长的AlN薄膜非常容易得到c轴择优取向的AlN薄膜。
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| 关 键 词： | AlN薄膜 射频（R．F．） 择优取向 氮终止的硅衬底 |
| 文章编号： | 1005-0086(2007)12-1430-05 |
| 修稿时间： | 2007年5月10日 |
Preparation of c-Axis Oriented Piezoeletric AlN Thin Films by Radio Frequency Magnetron Sputtering Method |
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| YANG Bao-heng,XU N,CHEN Xi-ming,XUE Yu-ming,LI Hua-peng.Preparation of c-Axis Oriented Piezoeletric AlN Thin Films by Radio Frequency Magnetron Sputtering Method[J].Journal of Optoelectronics·laser,2007,18(12):1430-1434. |
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| Authors: | YANG Bao-heng XU N CHEN Xi-ming XUE Yu-ming LI Hua-peng |
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| Affiliation: | YANG Bao-heng,XU Na,CHEN Xi-ming,XUE Yu-ming,LI Hua-peng(Tianjin Key Laboratory of Film Electronic , Communication Devices,Tianjin University of Technology,Tianjin 300191,China) |
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| Abstract: | Highly c-axis oriented piezoelectric AlN film were prepared on single-crystal Si(400) substrate by radio frequency(R.F.) magnetron sputtering technique.The dependences of the c-axis oritentation of the AlN films on the negative biase,gas pressure,gas ratio were studied.The growth mechanisms of AlN crystallites on different surface states of Si substrate were also analyzed.It was found tha AlN films deposited at nitrogen-terminated Si substates have highly c-axis selective oritentation. |
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| Keywords: | AlN thin films radio frequency(R F ) magentron sputtering preferred orientation nitrogen-terminated Si substrates |
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