| 紫外辐照对碲镉汞MIS结构复合特性的影响 |
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| 引用本文： | 赵军 陆慧庆. 紫外辐照对碲镉汞MIS结构复合特性的影响[J]. 红外与激光工程, 1998, 27(1): 48-51 |
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| 作者姓名： | 赵军 陆慧庆 |
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| 作者单位： | 中国科学院传感技术国家重点实验室，上海技术物理研究所 |
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| 摘 要： | 用光电导衰退法和ＭＩＳ器件的电容－电压特性测量研究了紫外辐照对碲镉汞样品的影响。研究表明：紫外辐照使ＭＩＳ器件的氧化膜／碲镉汞界面固定电荷减少，表面由积累向平带变化；紫外辐照使碲镉汞样品的电阻明显增大，样品的表面复合速度上升，少子体寿命下降．说明紫外辐射不仅对碲镉汞样品的表面有影响，而且在磅镉汞体内也有影响，这些效应可以用碲镉汞表面能带结构的模型来解释。
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| 关 键 词： | 碲镉汞 光电导器件 紫外辐照 MIS器件 |
THE EFFECT OF ULTRAVIOLET IRRADIATION ON THE HgCdTe MIS STRUCTURE |
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| Zhao Jun, Lu Huiqing, Gong Haimei, Fang Jiaxiong, Li Yanjin. THE EFFECT OF ULTRAVIOLET IRRADIATION ON THE HgCdTe MIS STRUCTURE[J]. Infrared and Laser Engineering, 1998, 27(1): 48-51 |
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| Authors: | Zhao Jun Lu Huiqing Gong Haimei Fang Jiaxiong Li Yanjin |
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| Abstract: | In this paper, the effect of the ultraviolet irradiation on the HgCdTe photoconductors is studied using the photoconductive decay method and the M IS capacitance - voltage measurement . It is shown that. the ultraviolet irradiation reduced the interface charge density of the anodic oxide - HgCdTe interfaces, thus the energy band is changed from strong accumulation to the near flat - band condition . After the ultraviolet irradiation, it is observed that the surface recombination velocity and the sample resistance are increased, the bulk minority lifetime is decreased . These effects can be ex- plained by the HgCdTe surface energy band model . |
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| Keywords: | HgCdTe Photoconductor device Ultraviolet irradiation Composite property MIS device |
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