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Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation
Authors:Ilin  A. S.  Matsukatova  A. N.  Forsh  P. A.  Vygranenko  Yu.
Affiliation:1.Faculty of Physics, Moscow State University, 119991, Moscow, Russia
;2.National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia
;3.Moscow Institute of Physics and Technology, Department of Nano-, Bio-, Information, and Cognitive Technologies, 141700, Dolgoprudnyi, Moscow region, Russia
;4.CTS-UNINOVA, Quinta da Torre, 2829-516, Caparica, Portugal
;
Abstract:Semiconductors - The structure and electrical properties of transparent indium-oxide thin films produced by plasma-enhanced reactive thermal evaporation at different substrate temperatures are...
Keywords:
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