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Near-Infrared InGaN Alloys Grown on High-In-Composition InGaN Buffer Layer |
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| Authors: | Lianhong Yang Guo Fuqiang Zhang Baohua Li Yanqing Chen Dunjun |
| Affiliation: | 1.Department of Physics, Changji College, 831100, Changji, China ;2.Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, 210093, Nanjing, China ; |
| Abstract: | Semiconductors - Near-infrared InGaN alloys were grown on a strain-relaxed high-In-composition InGaN buffer layer based on GaN/sapphire substrate by plasma assisted molecular beam epitaxy. The In... |
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