| 退火方式及PCBM阴极修饰层对聚合物太阳电池的影响 |
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| 引用本文： | 李文杰. 退火方式及PCBM阴极修饰层对聚合物太阳电池的影响[J]. 光电子．激光, 2010, 0(11): 1602-1604 |
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| 作者姓名： | 李文杰 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室;河北工业大学信息功能材料研究所; |
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| 基金项目： | 国家高技术研究发展计划资助项目(2009AA05Z422); 天津市应用基础及前沿技术研究计划资助项目(08JCZDJC22200); 国家重点基础研究发展规划“973”资助项目(2006CB202602,2006CB202603) |
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| 摘 要： | 研究了不同退火方式及PCBM阴极修饰层对聚合物太阳电池性能的影响。与前退火相比,后退火的器件性能显著提高,电池的开路电压Voc由0.36V增加到0.60V,能量转换效率η从0.85%提高到1.93%,短路电流密度Jsc和填充因子FF也有不同程度的改善;在电池的活性层与Al电极间沉积一定厚度的PCBM阴极修饰层也能改善电池的性能,当PCBM厚度为3nm时,聚合物太阳电池在100mW.cm-2强度光照下,Voc为0.59V,Jsc为6.43mA.cm-2,FF为55.1%,η为2.09%。
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| 关 键 词： | P3HT:PCBM 聚合物太阳电池 退火 阴极修饰层 |
Effects of annealing processes and the PCBM modified layer for cathode on polymer solar cells |
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| LI Wen-jie,(.Tianjin Key Laboratory of Photoelectronic Thin Film Devices,Technology,Key Laboratory of Optoelectronic Information Science,Technology,Ministry of Education. Effects of annealing processes and the PCBM modified layer for cathode on polymer solar cells[J]. Journal of Optoelectronics·laser, 2010, 0(11): 1602-1604 |
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| Authors: | LI Wen-jie (.Tianjin Key Laboratory of Photoelectronic Thin Film Devices Technology Key Laboratory of Optoelectronic Information Science Technology Ministry of Education |
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| Affiliation: | LI Wen-jie1,2,ZHANG Jian-jun1,ZHANG Ya-ping1,HU Zi-yang1,HAO Qiu-yan2,ZHAO Ying1,GENG Xin-hua1(1.Tianjin Key Laboratory of Photoelectronic Thin Film Devices , Technology,Key Laboratory of Optoelectronic Information Science , Technology,Ministry of Education,Institute of Photoelectronic Thin Film Devices , Technology,Nankai University,Tianjin 300071,China,2.Institute of Information Functional Materials,Hebei University of Technology,Tianjin 300130,China) |
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| Abstract: | The effects of different annealing processes and the PCBM modified layer for cathode on polymer solar cells are investigated.The performance of the polymer solar cells treated with post-annealing process is effectively improved compared with those treated with pre-annealing process.The open circuit voltage(Voc) and energy conversion efficiency (η) of post-annealing polymer solar cells are improved from 0.36 V and 0.85% to 0.60 V and 1.93%,respectively.The short-circuit current density(Jsc) and fill factor (FF) have more or less improvement at the same time.In addition, the performance of the solar cells is also improved when a certain thickness of PCBM layer is deposited between the active layer and the Al cathode.For the solar cells with a 3 nm PCBM layer, an open circuit voltage of 0.59 V,a short circuit current density of 6.43 mA·cm-2, an fill factor of 55.1% and an power conversion efficiency of 2.09% are achieved under 100 mW·cm-2 solar simulator illumination. |
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| Keywords: | P3HT:PCBM polymer solar cells annealing modified layer for cathode |
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