GaInAs metal/semiconductor/metal photodetectors with Fe:InP barrier layers grown by chemical beam epitaxy |
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| Authors: | Yang L Sudbo AS Tsang WT |
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| Affiliation: | AT&T Bell Labs., Murray Hill, NJ, USA; |
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| Abstract: | A GaInAs metal/semiconductor/metal (MSM) photodetector with a dark current less than 1 mu A is described. An Fe-doped InP layer was introduced between the metal and the GaInAs absorbing layer to improve the Schottky barrier height. A breakdown voltage of 30 V was achieved. A DC quantum efficiency of 64% and an impulse response, 1/e fall time of 190 ps were measured for a 20 mu m*100 mu m device. The layer structure is very attractive for integration with high-performance GaInAs/InP FETs.<> |
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