Characterisation of micrometre-sized inversion layer emitters in crystalline Si |
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| Authors: | Johnny E Wu Armin G Aberle |
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| Affiliation: | aCentre of Excellence for Advanced Silicon Photovoltaics and Photonics, University of New South Wales, Sydney NSW 2052, Australia |
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| Abstract: | The electrical properties of micrometre-sized inversion-layer (IL) emitters in crystalline Si are investigated by measuring their current–voltage characteristics using a so-called NOSFET device. The IL emitter is induced by a SiN/SiO double-layer stack. We show that by scanning the surface with a negatively biased tip, the IL emitter below the tip can be controllably eliminated. |
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| Keywords: | Inversion-layer emitter Crystalline silicon Solar cells NOSFET SiN/SiO double-layer stack |
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