| 用于DLTS测试的MOS结构 |
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| 引用本文： | 陈诺夫. 用于DLTS测试的MOS结构[J]. 河北工业大学学报, 1992, 0(2) |
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| 作者姓名： | 陈诺夫 |
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| 作者单位： | 河北工学院电气工程系 |
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| 摘 要： | 本文采用阳极氧化工艺制备AlGaAs/GaAs自身氧化膜,进而制成MOS结构。对氧化膜的组分和稳定性,以及MOS结构的C—V特性进行了实际测量和理论分析。实验结果表明:经氮气退火后的氧化膜的电学性质稳定。本文得出了适合于深能级瞬态谱测试的MOS结构,及采用MOS结构进行DLTS测试的测试条件。
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| 关 键 词： | 砷化镓 液相外延 阳极氧化 深能级 肖特基势垒 深能级瞬态谱 MOS结构 C—V特性 |
MOS Structure Being Used for the DLTS Measurements |
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| Chen Nuofu. MOS Structure Being Used for the DLTS Measurements[J]. Journal of Hebei University of Technology, 1992, 0(2) |
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| Authors: | Chen Nuofu |
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| Abstract: | Self-Oxidic film on AlGaAs/GaAs has been made by means of anodic oxidation processing, thus, MOS structure is formed in a further step. The stability and composition of oxidic film and the C-V characteristics of MOS structure have also been tested and analysed theoretically in this paper. Experimental results indicate: the oxidic film will be stable in electric properties after annealing in nitrogen ambient. The MOS structure is suitable for deep level trancient spectroscopy and the measuring conditions for MOS DLTS measuremens are presente din this paper. |
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| Keywords: | GaAs Liquid phase epitaxy LPE Anodic oxidation Deep levels Schottky barrier Deep level transient spectroscopy DLTS MOS structure C-V characteristics |
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