|
|||||
|
|
Doping modulated in-plane anisotropic Raman enhancement on layered ReS2 |
|
| Authors: | Zhang Na Lin Jingjing Zhang Shuqing Zhang Shishu Li Xiaobo Liu Dongyan Xu Hua Zhang Jin Tong Lianming |
| Affiliation: | 1.Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China ;2.School of Materials Science and Engineering, Shaanxi Normal University, Xi’an, 710119, China ; |
| Abstract: | Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-electronic applications. Herein, we show that by stacking monolayer rhenium disulfide (ReS2) on a flat gold film, the electrons doping in ReS2 can affect the in-plane anisotropic Raman enhancement of molecules adsorbed on ReS2. The change of enhancement factor and the degree of anisotropy in enhancement with layer number are sensitively dependent on the doping level of ReS2 by gold, which is further confirmed by Kelvin probe force microscopy (KPFM) measurements. These findings could open an avenue for probing anisotropic electronic interactions between molecules and 2D materials with low symmetry using Raman enhancement effect.  |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |