| 用SiH_4-N_2进行PECVD生长高质量SiN研究 |
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| 引用本文： | 刘英坤,李明月. 用SiH_4-N_2进行PECVD生长高质量SiN研究[J]. 微纳电子技术, 1997, 0(4) |
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| 作者姓名： | 刘英坤 李明月 |
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| 作者单位： | 电子工业部第十三研究所 |
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| 摘 要： | 用ＳｉＨ４┐Ｎ２进行ＰＥＣＶＤ生长高质量ＳｉＮ研究刘英坤李明月（电子工业部第十三研究所，石家庄，０５００５１）１引言众所周知，氮化硅薄膜，尤其是低温等离子体淀积的氮化硅薄膜ＰＥＣＶＤ—ＳｉｘＮｙ，因其良好的物理化学性质和优越的制备工艺，在现代半导体器...
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| 关 键 词： | GaP∶N wafer Far ultraviolet excitation PL and PLE spectra Fe impurity contamination |
Study of the Photoluminescence Characteristics of GaP∶N Wafer by U1tra Violet Excitation at Room Temperature |
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| Wang Shuifeng,Zeng Qingcheng,Wang Jianshan,Luo Qingfang. Study of the Photoluminescence Characteristics of GaP∶N Wafer by U1tra Violet Excitation at Room Temperature[J]. Micronanoelectronic Technology, 1997, 0(4) |
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| Authors: | Wang Shuifeng Zeng Qingcheng Wang Jianshan Luo Qingfang |
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| Abstract: | The photoluminescence(PL)and its excitation (PLE) spectra of liquid phase epitaxial growth GaP∶N wafer were measured by the u1tra violet fluorimetry (UVF) at room temperature.And the fluorescence spectra of the contamination impurities such as Fe,Cu and Cr which lead the green luminous efficiency to drop were observed also.In this paper the multi peak structure in the PL characteristic spectra of GaP∶N wafer and its corresponding relationship with the recombination emission of the isoelectronic centre exitations of N and N N pairs are described. |
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| Keywords: | GaP∶N wafer Far ultraviolet excitation PL and PLE spectra Fe impurity contamination |
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