Influence of lithium doping on the structural and electrical characteristics of ZnO thin films |
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Authors: | T Anto JohnyViswanathan Kumar Hideyuki ImaiIsaku Kanno |
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Affiliation: | a Centre for Materials for Electronics Technology (C-MET), (Department of Information Technology, Scientific Society, Ministry of Communication and Information Technology, Govt. of India), Athani (PO), Thrissur, 680 581 Kerala, Indiab Micro Engineering, Kyoto University, Kyoto 606-8501, Japan |
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Abstract: | Thin films of undoped and lithium-doped Zinc oxide, (Zn1 − xLix)O; x = 0, 0.05, 0.10 and 0.20 were prepared by sol-gel method using spin-coating technique on silicon substrates (111)Pt/Ti/SiO2/Si)]. The influence of lithium doping on the structural, electrical and microstructural characteristics have been investigated by means of X-ray diffraction, leakage current, piezoelectric measurements and scanning electron microscopy. The resistivity of the ZnO film is found to increase markedly with low levels (x ≤ 0.05) of lithium doping thereby enhancing their piezoelectric applications. The transverse piezoelectric coefficient, e31? has been determined for the thin films having the composition (Zn0.95Li0.05)O, to study their suitability for piezoelectric applications. |
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Keywords: | Piezoelectric properties Thin films Zinc oxide |
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