用于半导体激光器热沉的金刚石膜/Ti/Ni/Au金属化体系的研究

提出了一种用于半导体激光器热沉的金刚石膜/ Ti/ Ni/ Au金属化体系.采用金属化前期预处理、电子束蒸镀技术和后续低温真空热处理,金属层和金刚石膜之间获得了良好的结合强度.AES分析表明Ti/ Ni/ Au金刚石膜金属化体系中,Ni层起到了良好的阻挡效果;XRD显示预处理过的金刚石膜,镀膜后经过6 73K,2 h低温真空热处理,Ti/金刚石膜界面形成Ti O和Ti C;RBS分析进一步证实该金属化体系在6 73K,1h真空加热条件下具有良好的热稳定性.采用完全相同的半导体激光器结构,金刚石膜热沉的热阻仅为氮化铝热沉的4 0 % .

Investigation of Diamond/Ti/Ni/Au Metallization Scheme Applied in Semiconductor Lasers for Thermal Management

A novel Ti/Ni/Au diamond metallization scheme applied in semiconductor lasers for thermal management is reported.The good adhesion strength between metal layers and diamond substrates is obtained using optimum pretreated,electron beam evaporation technique,and post-treatment processing.AES analysis shows that the Ni layer of diamond(C)/Ti/Ni/Au plays an important part in diffusion barrier.XRD indicates that the Ti layer reacts with the pre-fire diamond substrates to form TiC and TiO species on the interface during post-deposition annealing at 673K for 2h in vacuum.Further,RBS confirms that diamond(C)/Ti/Ni/Au is of good thermal stability at 673K for 1h in vacuum.Using a same semiconductor laser scheme,the thermal impedance of diamond thermal management is only 40% of AlN thermal management.