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超临界二氧化碳(SCCO_2)无损伤清洗
引用本文:王磊,惠瑜,高超群,景玉鹏.超临界二氧化碳(SCCO_2)无损伤清洗[J].微纳电子技术,2010,47(2).
作者姓名:王磊  惠瑜  高超群  景玉鹏
作者单位:中国科学院微电子研究所,集成电路先导工艺研发中心,北京,100029
基金项目:国家自然科学基金资助项目(60976017)
摘    要:简要回顾了传统RCA清洗工艺的历史背景和清洗原理,介绍了RCA清洗随着工艺节点减小存在的局限性。在此基础上,阐述了以超临界二氧化碳(SCCO2)为媒质的新型清洗工艺,该工艺流程可以同时实现超临界流体清洗和干燥。结合自主研发的绿色环保二氧化碳超临界半导体清洗设备,论述了利用SCCO2对Si片进行无损伤清洗的工艺原理和工艺流程。分析了近年来国内外对SCCO2清洗的研究进展,展示了其在清洗方面的巨大潜力以及在微电子行业应用中的有效性和优越性,其研究成果有利于推动下一代清洗工艺的发展。

关 键 词:RCA清洗  硅片清洗  无损伤清洗  超临界二氧化碳  超临界流体  干燥

Damage-Free Cleaning Technology with Supercritical CO2
Wang Lei,Hui Yu,Gao Chaoqun,Jing Yupeng.Damage-Free Cleaning Technology with Supercritical CO2[J].Micronanoelectronic Technology,2010,47(2).
Authors:Wang Lei  Hui Yu  Gao Chaoqun  Jing Yupeng
Affiliation:Integrated Circuit Advanced Process Center;Institute of Microelectronics of Chinese Academy of Science;Beijing 100029;China
Abstract:The history and principle of traditional RCA cleaning process are reviewed briefly,and then,with the drastic shrinking of semiconductor technology node,the shortcomings of RCA cleaning are described.Then,the supercritical carbon dioxide(SCCO_2)as a novel cleaning techno-logy for cleaning process is discussed,which can realize cleaning and drying at the same time.Based on our self-made green SCCO_2 cleaning apparatus,the principle and the flow of damage-free cleaning technology with supercritical CO_2 are de...
Keywords:RCA cleaning  Si wafer cleaning  damage-free cleaning  supercritical carbon dio-xide(SCCO_2)  supercritical fluid(SCF)  drying
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