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Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction |
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| Authors: | Liang-Wen Ji Yu-Jen Hsiao I-Tseng Tang Teen-Hang Meen Chien-Hung Liu Jenn-Kai Tsai Tien-Chuan Wu Yue-Sian Wu |
| Affiliation: | 1.Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan;2.National Nano Device Laboratories, Tainan 741, Taiwan;3.Department of Greenergy Technology, National University of Tainan, Tainan 700, Taiwan;4.Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan;5.Department of Mechanical Engineering, National Chung-Hsing University, Taichung 402, Taiwan |
| Abstract: | The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%. |
| Keywords: | Heterojunction Nanocrystal ZnS |