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Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature |
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| Authors: | Lebedev A A Kozlovski V V Levinshtein M E Malevsky D A Oganesyan G A Strel’chuk A M Davydovskaya K S |
| Affiliation: | 1.Ioffe Institute, St. Petersburg, Russia ;2.Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia ; |
| Abstract: | Semiconductors - The effect of annealing on the parameters of 4H-SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The electron energy is 0.9 MeV,... |
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