|
|||||
|
|
Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing |
|
| Authors: | Tyschenko I E Spesivtsev E V Shklyaev A A Popov V P |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia ;2.Novosibirsk State University, 630090, Novosibirsk, Russia ; |
| Abstract: | Semiconductors - The thermal stability of silicon-on-insulator films with a thickness of 4.7 and 2.2 nm is studied as a function of annealing temperature in the range of... |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |