High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching |
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| Authors: | Takehiko Nomura Hiroshi Kambayashi Mitsuru Masuda Sonomi Ishii Nariaki Ikeda Jiang Lee Seikoh Yoshida |
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| Affiliation: | Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama; |
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| Abstract: | Improved characteristics of an AlGaN/GaN HFET are reported. In this paper, the authors introduce a new ohmic electrode of Ti/AlSi/Mo and a low refractive index SiNx to decrease the contact resistance and gate leakage current. The AlGaN/GaN HFET showed a low specific resistance of 6.3 mOmega middot cm2 and a high breakdown voltage of 750 V. The switching characteristics of an AlGaN/GaN HFET are investigated. The small turn-on delay of 7.2 ns, which was one-tenth of Si MOSFETs, was measured. The switching operation of the HFET showed no significant degradation up to 225 degC |
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