Introduction in space technologies, processing and applications of ULSI/WSI/3D-WSI on functional 3D nano- and optoelectronic elements |
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Authors: | Alexandre N Bubennikov |
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Affiliation: | Department of Physical and Quantum Electronics, Hi-Tech Center, Moscow Institute of Physics and Technology (State University), Dolgoprudnyi 141700, Russian Federation |
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Abstract: | Dynamics and reforms by which the semiconductor industry could be transformed into next-generation manufacturing of Si and nano-electronic ULSI and WSI are discussed. For competitive Si ULSI and WSI the functional integration becomes a core design principle and cardinal simplification of manufacturing processes/equipment becomes a core technology principle. Concept of single-wafer single-lithography (no-lithography on spacefabs) technology for nano-electronic complementary bipolar field-effect (CBFE), Vertical Merged MOS (VMMOS) and optoelectronic VMMOS (OVMMOS), CBFE (OCBFE) elements increasing the packaging density for high-speed low-voltage ULSI and WSI is considered. Technology and Economics (Technonomics) concepts of space hyperhigh-vacuum technologies and processing in framework of flexible scalable no-lithography spacefab under condition of low and high orbital flight are presented. |
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Keywords: | Space Hyperhigh-vacuum One-lithography No-lithography Single-wafer technologies |
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