| 利用FFT图象检测和分析砷化镓材料中的缺陷 |
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| 引用本文： | 张福贵.利用FFT图象检测和分析砷化镓材料中的缺陷[J].电子与信息学报,1988,10(4):377-380. |
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| 作者姓名： | 张福贵 |
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| 作者单位： | 中国科学院电子学研究所 北京 |
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| 摘 要： | 砷化镓材料中缺陷的不均匀分布严重地限制了集成电路生产的重复性。本文首次提出一种利用傅里叶变换频谱图象检测和分析沿110和010方向上位错缺陷的统计分布的方法,称为FTIT检验法。文中定义的相参系数和纹理复杂系数是定量地检验制造集成电路材料中缺陷的重要指标。
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| 关 键 词： | 红外图象 砷化镓 FTIT |
| 收稿时间： | 1986-12-19 |
| 修稿时间： | 1988-2-22 |
FFT IMAGE APPLICATION TO DETECTION AND ANALYSIS OF THE DEFECTS IN GaAs MATERIALS |
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| Zhang Fugui.FFT IMAGE APPLICATION TO DETECTION AND ANALYSIS OF THE DEFECTS IN GaAs MATERIALS[J].Journal of Electronics & Information Technology,1988,10(4):377-380. |
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| Authors: | Zhang Fugui |
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| Affiliation: | institute of Electronics Acadcmia Sinica Beijing |
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| Abstract: | The presence of inhomogeneous distribution of defects in GaAs wafers strongly limits the reproducibility of IC fabrication processes. In this paper, we report for the first time a Fourier transformation image testing approach, called FTIT, for the two dimensional evaluation of the disorder in a wafer, as it appears in infrared transmission timages. The Fourier analysis of the cell structure reveals a dominat statistical rectangular organization of the dislocations along (110) and <010) directions. The a and b defined in the paper are typical organization of the cells to evaluate quantitatively the properties of IC materials. |
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| Keywords: | Infra-red image GaAs material FFT |
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