Accurate modeling for drain breakdown current of GaAs MESFET's |
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Authors: | Fujii K. Hara Y. Yakabe T. Yabe H. |
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Affiliation: | Japan Radio Co. Ltd., Tokyo; |
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Abstract: | Extensive measurements of a drain breakdown current as a function of device bias are reported in this paper. To represent the measured drain breakdown currents accurately, a new modeling function and an equivalent circuit controlled by two voltages are proposed. This model, when integrated into a large-signal analysis program, improves the accuracy of the simulation |
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