首页 | 本学科首页   官方微博 | 高级检索  
     


Chemical States of Implanted Aluminum Ions in Silica and Silicon Ions in Alumina
Authors:Kohei Fnkumi  Akiyoshi Chayahara  Masaki Makihara  Kanenaga Fujii  Junji Hayakawa  Mamoru Satou
Affiliation:Osaka National Research Institute, AIST, Ikeda, Osaka, 563 Japan
Abstract:Aluminum and silicon ions have been implanted in silica glass and α-alumina single crystal, respectively, to doses ranging from 1 × 1015 to 1 × 1017 ions·cm-2. The chemical states of these implanted ions have been studied by X-ray fluorescence spectroscopy. It is found that the implanted aluminum atoms are coordinated only by oxygen atoms, irrespective of implantation dose. On the other hand, the implanted silicon atoms are coordinated only by oxygen atoms at low doses and by both oxygen and silicon atoms at high doses. Although the chemical state of the aluminum atoms is unchanged by heat treatment, that of the silicon atoms is changed toward a less positively charged state. It is inferred that the chemical states of the implanted atoms are controlled by the transport process, although these tend to obey the thermodynamic stability.
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号