The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas |
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| Authors: | V. V. Lundin A. V. Sakharov E. E. Zavarin D. A. Zakgeim A. E. Nikolaev P. N. Brunkov M. A. Yagovkina A. F. Tsatsul’nikov |
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| Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.Submicron Heterostructures for Microelectronics Research and Engineering Center,Russian Academy of Sciences,St. Petersburg,Russia |
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| Abstract: | AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher. |
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