Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate |
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| Authors: | V N Bessolov E V Konenkova T A Orlova S N Rodin M P Shcheglov D S Kibalov V K Smirnov |
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| Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.Quantum Silicon Company,Moscow,Russia |
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| Abstract: | We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101?1?) epilayers deviating by an angle of about 62° from the polar direction and having an X-ray rocking curve with a minimum FWHM value of ωθ ~ 60 arcmin. |
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