Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer |
| |
Authors: | S V Mikhailovich A Yu Pavlov K N Tomosh Yu V Fedorov |
| |
Affiliation: | 1.Institute of Ultra High Frequency Semiconductor Electronics,Russian Academy of Sciences,Moscow,Russia |
| |
Abstract: | A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide layer by means of reactive ion etching in inductively coupled BCl3 plasma. Using the proposed etching technology, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) with a buried gate have been successfully fabricated for the first time. It is shown that the currents of obtained HEMTs are independent of the number of etching cycles, while the gate operating point shifts toward positive voltages up to obtaining transistors operating in the enhancement mode. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|